Speaker
Description
Chemical versatility of monolayers of Transition Metal Dichalcogenides such as WS₂ makes them highly attractive for a wide range of applications, including optoelectronics as well as hydrogen catalysis. However, the role of defects and their impact on the electronic, optical and structural properties of TMDs remains a topic of ongoing debate.
In this study, we rely on High-Angle Annular Dark-Field Scanning Transmission Electron Microscopy (HAADF-STEM) technique to characterize defects induced by ion bombardment in WS₂ monolayers grown by Chemical Vapor Deposition (CVD). We correlate the defects size to the ion dose. The results agree with what we observe in terms of photoluminescence (PL). We are planning experiments on pristine and bombarded WS₂ films to investigate the role of the defects on the material lattice dynamics using Ultrafast Electron Diffraction (UED) method. Our results will be relevant for the ability to use such engineered defect network in WS₂ for demonstrating a proof-of-concept Quantum Reservoir Computing (QRC) approach.